METHOD OF FORMING AN ALTERNATING PHASE SHIFT CIRCUITRY FABRICATION MASK, METHOD OF FORMING A CIRCUITRY FABRICATION MASK HAVING A SUBTRACTIVE ALTERNATING PHASE SHIFT REGION, AND ALTERNATING PHASE SHIFT MASK

US6720114B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Amy A. Winder · Idaho City, US
• Paul Chipman · Pflugerville, US

Key dates

• Filing date: Aug 21, 2000
• Grant date: Apr 13, 2004
• Expiry date: Jun 12, 2021

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/30
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Disclosed are methods of forming alternating phase shift circuitry fabrication masks, methods of forming circuitry fabrication masks having a subtractive alternating phase shift region, and alternating phase shift masks. In one implementation, a method of forming an alternating phase shift circuitry fabrication mask incudes combining circuitry pattern data biasing and wet undercut etching of light transmissive substrate material adjacent phase shift regions of the mask in fabricating the mask. In one implementation, a method of forming an alternating phase shift circuitry fabrication mask includes combining circuitry pattern data biasing and wet undercut etching of light transmissive substrate material adjacent phase shift regions of the mask effective to achieve a first data biased pattern when using the mask to fabricate circuitry of a desired circuit pattern on another substrate. The first data biased pattern has at least some first resolution spacing falling between a discrete finite resolution spacing of which a writing tool used to fabricate the mask is capable of achieving.