Current source bias circuit with hot carrier injection tracking
US6720228B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2000 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Oct 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F1/301
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A current mirror bias circuit for an RF amplifier transistor is modified whereby the reference transistor of the current mirror tracks hot carrier degradation in the RF transistor. Gate bias to the current mirror transistor is modified whereby the drain-to-gate voltage can be positive, and the lightly doped drain region in the lateral n-channel reference transistor is shortened and dopant concentration increased to increase the electric field of the reference transistor to provide the hot carrier injection degradation characteristics similar to the main transistor. Additionally, the gate length of the reference transistor can be shortened to effect the hot carrier injection degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.