Pre-pattern surface modification for low-k dielectrics using A H2 plasma

US6720247B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Brian K. Kirkpatrick · Allen, US
• Michael Morrison · Tempe, US
• Andrew John McKerrow · Dallas, US
• Kenneth Newton · McKinney, US
• Dirk N. Anderson · Plano, US

Key dates

• Filing date: Oct 25, 2001
• Grant date: Apr 13, 2004
• Expiry date: Oct 25, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76826
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A low-k dielectric layer (104) is treated with a dry H2 plasma pretreatment to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130). The H2 plasma pre-treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130) or during a rework of the pattern (130).