Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
US6720259B2 · kind B2 · utility
27Cited by
6References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2002 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Oct 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure, uniformity and repeatability is improved by the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.