LVTSCR-like structure with internal emitter injection control

US6720624B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Vladislav Vashchenko · Palo Alto, US
• Ann Concannon · San Jose, US
• Peter J. Hopper · San Jose, US
• Marcel ter Beek · Pleasanton, US

Key dates

• Filing date: Aug 2, 2002
• Grant date: Apr 13, 2004
• Expiry date: Aug 2, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/80

Abstract

In an ESD protection device using a LVTSCR-like structure, the holding voltage is increased by placing the p+ emitter outside the drain of the device, thereby retarding the injection of holes from the p+ emitter. The p+ emitter may be implemented in one or more emitter regions formed outside the drain. The drain is split between a n+ drain and a floating n+ region near the gate to avoid excessive avalanche injection and resultant local overheating.