Structure and method for MOSFET with metallic gate electrode
US6720630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2001 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | May 30, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal oxide semiconductor field effect transistor (MOSFET) having a metallic gate electrode that is protected with hanging sidewall spacers during a subsequent gate oxidation process is provided. A semiconductor structure formed by the inventive method is also provided. Specifically, the inventive semiconductor structure includes a semiconductor substrate comprising a patterned gate region formed atop a patterned gate dielectric, the patterned gate region includes at least a metallic gate electrode formed atop a polysilicon gate electrode; hanging sidewall spacers formed on an upper portion of the patterned gate region including the metallic gate electrode; and a thermal oxide layer formed on lower portions of patterned gate region including a portion of the polysilicon gate electrode, but not the metallic gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.