Semiconductor device having a high-K gate dielectric and method of manufacture thereof
US6723581B1 · kind B1 · utility
29Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Oct 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a semiconductor device comprising, providing a semiconductor substrate, forming a substantially-hydroxylated SiOxHy layer on the semiconductor substrate in a presence of oxygen and hydrogen, and forming a metallic oxide, high-K dielectric layer on the substantially-hydroxylated SiOxHy layer. The substantially-hydroxylated SiOxHy layer has a surface concentration of hydroxyl (OH) species equal to or greater than about 3×1014 hydroxyl per cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.