Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 · kind B2 · utility
39Cited by
56References
8Claims
0Family size
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Key dates
| Filing date | Feb 12, 2001 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Feb 12, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.