PMOSFET device with localized nitrogen sidewall implantation
US6724053B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2000 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Feb 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/637
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
P-type metal-oxide semiconductor field effect transistor (PMOSFET) devices have a characteristic property known as threshold voltage. This threshold voltage may consist of separate threshold voltages associated with the main portion of the gate region of the device and with the sidewall corner of the device. Under some conditions, the threshold behavior in the sidewall corner region of the device may dominate the performance of the device, not necessarily in the manner intended by the designer of the device. A method of controlling threshold voltage behavior is described. In particular, ion implantation of nitrogen in the gate sidewall region of the device can provide such control. Devices made by this method are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.