ESD device used with high-voltage input pad
US6724677B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
An electrostatic discharge (ESD) device used with a high-voltage input pad is described. The ESD device serves as a secondary device of a two-stage protection circuit, and comprises a substrate, a first MOS transistor and a second MOS transistor. The first MOS transistor is disposed on the substrate and comprises a first gate, a first drain and a first source, wherein the first gate is coupled to a bias Vg1, and the first drain is coupled to the high-voltage input pad. The second MOS transistor is disposed on the substrate and comprises a second gate, a second drain and a second source, wherein the second gate and the second source are both grounded, and the second drain is electrically connected with the first source of the first MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.