Laminated diffusion barrier
US6726996B2 · kind B2 · utility
6Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2001 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Mar 10, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.