Capacitor with high dielectric constant materials and method of making
US6727140B2 · kind B2 · utility
12Cited by
25References
29Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 11, 2001 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Jul 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.