Insulation film forming material, insulation film, method for forming the insulation film, and semiconductor device
US6727515B2 · kind B2 · utility
7Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | May 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Porous insulation films 28, 40, 50 are formed of an insulation forming material including a silicon compound having a skeleton containing C—C bonds, a pore forming compound which is decomposed or evaporated by a heat treatment, and a solvent which dissolves the silicon compound with the pore forming compound, whereby the porous insulation film can have good mechanical strength and low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.