Method and device for improving hot carrier reliability of an LDMOS transistor using drain ring over-drive bias

US6727547B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Douglas Brisbin · San Jose, US
• Andy Strachan · Santa Clara, US

Key dates

• Filing date: Oct 8, 2002
• Grant date: Apr 27, 2004
• Expiry date: Oct 8, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/257

Abstract

In a LDMOS transistor or matrix of transistors, hot carrier degradation effects are reduced by providing a ring drain and providing the ring drain with an overvoltage bias relative to the internal drain(s) of the LDMOS transistors.