Method and circuit configuration for generating a data strobe signal for very fast semiconductor memory systems
US6728144B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Jul 29, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1051
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for generating a data strobe signal in order to transmit the latter through a signal line with tristate behavior from/to a semiconductor memory module for writing/reading data to/from the semiconductor module. The data strobe signal, in response to the outputting or the reception of a read/write command, proceeding from the tristate state, is clocked with a predetermined clock frequency after a short preamble period. The data strobe signal is occupied, in the preamble period, by one or more pulses corresponding to the clock frequency. In very fast memory systems, this avoids a temporal offset between a system clock and data acceptance controlled by data strobe signal pulses. A semiconductor circuit configuration having a semiconductor circuit module with a circuit for generating such a data strobe signal, is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.