Method and apparatus for run-to-run control of trench profiles
US6728591B1 · kind B1 · utility
18Cited by
13References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2001 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Mar 7, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and an apparatus are provided for performing run-to-run control of trench profiles. At least one semiconductor wafer is processed. A trench metrology data from the processed semiconductor wafer is acquired. Data relating to at least one process chamber characteristic is acquired while processing the semiconductor wafer. A chamber characteristic adjustment process is performed in response to the trench metrology data and the data relating to the processing chamber characteristic. A feedback adjustment of the processing chamber characteristic is performed in response to the chamber characteristic adjustment process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.