Field effect transistor with improved isolation structures

US6730569B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Lily Springer · Dallas, US
• Binghua Hu · Plano, US
• Chin-Yu Tsai · Plano, US
• Jozef Mitros · Richardson, US

Key dates

• Filing date: Oct 25, 2001
• Grant date: May 4, 2004
• Expiry date: Oct 25, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76216
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An electronic device architecture is described comprising a field effect device in an active region 22 of a substrate 10. Channel stop implant regions 28a and 28b are used as isolation structures and are spaced apart from the active region 22 by extension zones 27a and 27b. The spacing is established by using an inner mask layer 20 and an outer mask layer 26 to define the isolation structures.