Magnetoresistance effect device
US6730949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2002 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Apr 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect devices having a magnetization free layer free to rotate in an applied magnetic field. The magnetization free layer may include first and second ferromagnetic material layers with a nonmagnetic material layer disposed between the two ferromagnetic material layers. Those ferromagnetic materials are antiferromagnetically coupled with each other at a magnetic coupling field J (−3 [kOe]≦J<0 [kOe]) or ferromagnetically coupled with each other. Alternatively, the magnetization free film includes a first ferromagnetic material layer including a center region having a first magnetization and edge regions having a second magnetization different from the first magnetization and a second ferromagnetic material layer including a center region having a third magnetization parallel to the first magnetization and edge regions having a fourth magnetization different from the third magnetization. In another embodiment, a roughness at an interface between the first ferromagnetic material layer and the first nonmagnetic material coupling layer or an interface between the first second ferromagnetic material layer and the first nonmagnetic material coupling layer is …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.