Local interconnect using the electrode of a ferroelectric
US6730950B1 · kind B1 · utility
23Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2003 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Jan 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ferroelectric device structures are provided comprising a ferroelectric capacitor, first and second circuit elements, and first and second contacts. The ferroelectric capacitor residing over the first and second circuit elements, and first and second contacts, has a conductive plate that may be used as a local interconnect layer. The conductive plate extends between and electrically couples first and second circuit elements directly through first and second contacts of the ferroelectric memory device. Methods are also provided for forming the local interconnect layer within the conductive plate of the ferroelectric capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.