Plasma treatment for copper oxide reduction
US6734102B2 · kind B2 · utility
22Cited by
26References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Sep 23, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/907
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.