Sudha Rathi
33Patents
11h-index
58Co-inventors
78Inventor score
Filing activity: Jul 30, 1999 → Aug 26, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8361906B2 | Ultra high selectivity ashable hard mask film | Electricity | 53 | Active |
| US6355571B1 | Method and apparatus for reducing copper oxidation and contamination in a semiconductor device | Electricity | 52 | Expired |
| US8536065B2 | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration | Electricity | 46 | Active |
| US6734102B2 | Plasma treatment for copper oxide reduction | Emerging Cross-Sectional Technologies | 22 | Expired |
| US7407893B2 | Liquid precursors for the CVD deposition of amorphous carbon films | Electricity | 21 | Expired |
| US6853043B2 | Nitrogen-free antireflective coating for use with photolithographic patterning | Chemistry; Metallurgy | 21 | Expired |
| US7638440B2 | Method of depositing an amorphous carbon film for etch hardmask application | Physics | 20 | Active |
| US6946401B2 | Plasma treatment for copper oxide reduction | Electricity | 19 | Expired |
| US6541369B2 | Method and apparatus for reducing fixed charges in a semiconductor device | Emerging Cross-Sectional Technologies | 16 | Expired |
| US8993454B2 | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration | Electricity | 14 | Active |
| US6927178B2 | Nitrogen-free dielectric anti-reflective coating and hardmask | Electricity | 13 | Expired |
| US9299581B2 | Methods of dry stripping boron-carbon films | Electricity | 7 | Active |
| US7867578B2 | Method for depositing an amorphous carbon film with improved density and step coverage | Electricity | 6 | Active |
| US9390910B2 | Gas flow profile modulated control of overlay in plasma CVD films | Electricity | 5 | Active |
| US7105460B2 | Nitrogen-free dielectric anti-reflective coating and hardmask | Electricity | 4 | Expired |
| US8105465B2 | Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) | Electricity | 3 | Active |
| US8282734B2 | Methods to improve the in-film defectivity of PECVD amorphous carbon films | Chemistry; Metallurgy | 3 | Active |
| US7776516B2 | Graded ARC for high NA and immersion lithography | Electricity | 3 | Active |
| US10373822B2 | Gas flow profile modulated control of overlay in plasma CVD films | Electricity | 2 | Active |
| US9337072B2 | Apparatus and method for substrate clamping in a plasma chamber | Electricity | 2 | Active |
| US6700202B2 | Semiconductor device having reduced oxidation interface | Electricity | 2 | Expired |
| US8513129B2 | Planarizing etch hardmask to increase pattern density and aspect ratio | Electricity | 1 | Active |
| US8211626B2 | Maintenance of photoresist activity on the surface of dielectric arcs for 90 nm feature sizes | Physics | 1 | Active |
| US7094442B2 | Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon | Electricity | 1 | Expired |
| US7514125B2 | Methods to improve the in-film defectivity of PECVD amorphous carbon films | Chemistry; Metallurgy | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.