Method of manufacturing a semiconductor device and a semiconductor device
US6734104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Nov 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76874
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Over a plug, a stopper insulating film made of an organic film is formed, followed by successive formation of an insulating film and a hard mask. In the presence of a patterned resist film, the hard mask is dry etched, whereby an interconnection groove pattern is transferred thereto. By ashing with oxygen plasma, the resist film is removed to form the interconnection-groove-pattern-transferred hard mask. At this time, the organic film constituting the stopper insulating film has been covered with the insulating film. Then, the insulating film, stopper insulating film and hard mask are removed to form the groove pattern of interconnection. Hydrogen annealing may be conducted after formation of the plug, or the stopper insulating film may be formed over the plug via an adhesion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.