Keisuke Funatsu
15Patents
7h-index
37Co-inventors
62Inventor score
Filing activity: Mar 20, 1990 → Mar 3, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5503708A | Method of and apparatus for removing an organic film | Electricity | 47 | Expired |
| US5202275A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5331191A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5478401A | Apparatus and method for surface treatment | Electricity | 19 | Expired |
| US5780882A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5739589A | Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6169324A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6127255A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5557147A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5811316A | Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6548847B2 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6342412B1 | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6495466B2 | Method of manufacturing a semiconductor device and a semiconductor device | Electricity | 3 | Expired |
| US6894334B2 | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6734104B2 | Method of manufacturing a semiconductor device and a semiconductor device | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.