Semiconductor integrated circuit device and the method of producing the same
US6734479B1 · kind B1 · utility
10Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1999 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Dec 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor integrated circuit device having a memory cell which includes a MIS.FET and a capacitance element, the conductivity type of a low-resistance polysilicon film which constitutes the gate electrode (5g) of the memory cell selecting MIS.FET (Q) of n-channel type constituting the memory cell is set at p+-type in order to enhance the refresh characteristics of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.