RF power transistor with internal bias feed
US6734728B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Dec 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Conventional broadband RF power amplifiers use a ¼ wavelength transmission line to decouple the gate bias DC source from the gate circuitry and a second ¼ wavelength transmission line to decouple the drain bias DC source from the drain circuitry, taking up considerable printed circuit board space. A novel broadband RF power amplifier uses a transistor with separate terminals for injection of gate bias and drain bias DC sources, eliminating the need for ¼ wavelength transmission lines, thereby freeing up space and allowing higher density packaging. The power amplifier transistor can be implemented with a single die circuit or multiple die circuits operating in parallel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.