Method of forming a copper wiring in a semiconductor device
US6737349B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 5, 2002 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Dec 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a copper wiring in a semiconductor device. The method can prevent an increase of a dielectric constant of a low dielectric constant film and making bad deposition of a copper anti-diffusion film, due to infiltration of an organic solvent, an etch gas, etc. into the low dielectric constant film exposed at the side of a damascene pattern during a wet cleaning process for removing polymer generating when a portion of the low dielectric constant film is etched to form the damascene pattern or during a photoresist pattern strip process. In order accomplish these purpose, a CFXHY polymer layer is changed to a SiCH film using SiH4 plasma without removing the polymer layer formed at the side of the damascene pattern. Therefore, infiltration of an organic solvent or an etch gas can be prevented due to the SiCH film having a condensed film quality and a good mechanical strength. Also, the SiCH film serves as a copper anti-diffusion film and in structure, supports a porous low dielectric constant film having a weak mechanical strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.