Memory module having a memory cell and method for fabricating the memory module
US6737695B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 28, 2002 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | May 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/395
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory module and a method for fabricating the memory module are described. The memory module has a memory cell that is disposed in a vertical trench. The memory cell has a first and a second transistor connected in series and the first transistor is able to be turned on via a first word line and the second transistor is able to be turned on via a charge of a capacitor. The two transistors are connected between a voltage source and a bit line. In this way, the charge state of the capacitor is evaluated by the second transistor. If the capacitor has a positive charge, then the second transistor is turned on. If, moreover, the first word line is driven, then the first transistor is also turned on. As a consequence, the bit line is connected to the voltage source and supplied with a sufficiently strong signal for evaluation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.