Transistor structure having silicide source/drain extensions

US6737710B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Peng Cheng · Beijing, CN
• Brian S. Doyle · Portland, US
• Gang Bai · San Jose, US

Key dates

• Filing date: Jun 30, 1999
• Grant date: May 18, 2004
• Expiry date: Jun 30, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/258

Abstract

A MOSFET includes a double silicided source/drain structure wherein the source/drain terminals include a silicided source/drain extension, a deep silicided source/drain region, and a doped semiconductor portion that surrounds a portion of the source/drain structure such that the suicides are isolated from the MOSFET body node. In a further aspect of the present invention, a barrier layer is formed around a gate electrode to prevent electrical shorts between a silicided source/drain extension and the gate electrode. A deep source/drain is then formed, self-aligned to sidewall spacers that are formed subsequent to the silicidation of the source/drain extension.