Etch process for recessing polysilicon in trench structures

US6740595B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stephan Kudelka · Radeberg, DE
• Helmut Tews · Poughkeepsie, US
• Alexander Michaelis · Wappingers Falls, US
• Uwe Schroeder · Fishkill, US
• Martin Popp · Dresden, DE
• Kristin Schupke · Dresden, DE
• Daniel Koehler · Althengstett, DE

Key dates

• Filing date: Apr 12, 2002
• Grant date: May 25, 2004
• Expiry date: Apr 12, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/047
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for eching a recess in a polysilicon region of a semiconductor device by applying a solution of NH4OH in water to the polysilicon.