Two-mask trench schottky diode
US6740951B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2001 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | May 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
A Schottky rectifier includes a semiconductor structure having first and second opposing faces each extending to define an active semiconductor region and a termination semiconductor region. The semiconductor structure includes a cathode region of the first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face. The drift region has a lower net doping concentration than that of the cathode region. A plurality of trenches extends from the second face into the semiconductor structure and defines a plurality of mesas within the semiconductor structure. At least one of the trenches is located in each of the active and the termination semiconductor regions. A first insulating region is located adjacent the semiconductor structure in the plurality of trenches. A second insulating region electrically isolates the active semiconductor region from the termination semiconductor region. An anode electrode is (a) adjacent to and forms a Schottky rectifying contact with the semiconductor structure at the second face and is (b) adjacent to the first insulating region in the trenches. The anode electrode electrically connects together …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.