Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber
US6743668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2003 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Apr 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a semiconductor device and the process of forming a metal oxy-nitride gate dielectric layer or a metal-silicon oxy-nitride gate dielectric layer. The metal oxy-nitride or metal-silicon oxy-nitride dielectric layer comprises at least one of a metal, silicon, oxygen, and nitrogen atoms where the nitrogen to oxygen atomic ratio is at least 1:2. The metal oxy-nitride or metal-silicon oxy-nitride material has a higher dielectric constant in comparison with a silicon dioxide, providing similar or improved electrical characteristics with a thicker thickness. Other benefits include reduced leakage properties, improved thermal stability, and reduced capacitance versus voltage (CV) hysteresis offset.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.