Method for forming silicide at source and drain

US6743717B1 · kind B1 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Kuo-Chien Wu · Miaoli City, TW
• Jeng-Ping Lin · Taoyuan, TW

Key dates

• Filing date: Mar 26, 2003
• Grant date: Jun 1, 2004
• Expiry date: Mar 26, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

A method for forming silicide at source and drain. The method includes providing a semiconductor substrate having an active region and peripheral region, wherein gates with source and drain on two sides are formed in the peripheral region, conformally forming a barrier layer to cover the active region and the peripheral region, forming a mask layer to cover the barrier layer at the active region, removing the barrier layer from the peripheral region; removing the mask layer, forming a metal layer to cover the peripheral region, and subjecting the metal layer to thermal process such that silicon reacts with the metal to form silicide at the source and the drain.