Inventor · Taoyuan, TW

Jeng-Ping Lin

33Patents
9h-index
38Co-inventors
75Inventor score

Filing activity: Jun 15, 1995 → Nov 12, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6734066B2 Method for fabricating split gate flash memory cell Electricity 52 Expired
US8343829B2 Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same Electricity 23 Active
US7994559B2 Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same Electricity 22 Active
US6794250B2 Vertical split gate flash memory cell and method for fabricating the same Electricity 19 Expired
US6800895B2 Vertical split gate flash memory cell and method for fabricating the same Electricity 17 Expired
US5536683A Method for interconnecting semiconductor devices Electricity 17 Expired
US6432774B1 Method of fabricating memory cell with trench capacitor and vertical transistor Electricity 16 Expired
US6355529B2 Method of fabricating memory cell with vertical transistor Electricity 11 Expired
US6696717B2 Memory cell with vertical transistor and trench capacitor Electricity 9 Expired
US6534359B2 Method of fabricating memory cell Electricity 7 Expired
US6781181B2 Layout of a folded bitline DRAM with a borderless bitline Electricity 7 Expired
US7541244B2 Semiconductor device having a trench gate and method of fabricating the same Electricity 3 Active
US7678692B2 Fabrication method for a damascene bit line contact plug Electricity 3 Active
US6801462B2 Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devices Electricity 3 Expired
US6788598B2 Test key for detecting overlap between active area and deep trench capacitor of a DRAM and detection method thereof Electricity 2 Expired
US7109094B2 Method for preventing leakage in shallow trench isolation Electricity 2 Expired
US6743717B1 Method for forming silicide at source and drain Electricity 2 Expired
US11315928B2 Semiconductor structure with buried power line and buried signal line and method for manufacturing the same Electricity 2 Active
US7759190B2 Memory device and fabrication method thereof Electricity 2 Active
US7144799B2 Method for pre-retaining CB opening Electricity 1 Expired
US8395209B1 Single-sided access device and fabrication method thereof Electricity 1 Active
US6909136B2 Trench-capacitor DRAM cell having a folded gate conductor Electricity 1 Expired
US11002562B2 Encoder using a magnetic sensing assembly and an optical sensing assembly and position detection method for a motor Physics 1 Active
US7005698B2 Split gate flash memory cell Electricity 1 Expired
US6958521B2 Shallow trench isolation structure Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.