Method for forming a conductive copper structure
US6743719B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2003 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jan 22, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/908
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides, in one embodiment, a method of forming a metal layer over a semiconductor wafer. The method includes the chemical reduction of copper oxide (105) over the deposited copper seed layer (110) by exposure to a substantially copper-free reducing agent solution (120), such that the copper oxide (105) is substantially converted to elemental copper, followed by electrochemical deposition of a second copper layer (125) over the copper seed layer (110). Such methods and resulting conductive structures thereof may be advantageously used in methods to make integrated circuits comprising interconnection metal lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.