Method of spin etching wafers with an alkali solution
US6743722B2 · kind B2 · utility
9Cited by
29References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jan 29, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of relieving surface stress on a thin wafer by removing a small portion of the wafer substrate, the substrate being removed by applying a solution of KOH to the wafer while the wafer spins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.