Dopant precursors and processes
US6743738B2 · kind B2 · utility
573Cited by
46References
40Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 13, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Nov 18, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H3Si)3-xMRx, (H3Si)3N, and (H3Si)4N2, wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, P, As, and Sb. Preferred deposition methods produce non-hydrogenated silicon alloy and doped Si-containing films, including crystalline films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.