Submicron MOSFET having asymmetric channel profile
US6744083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Oct 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A MOSFET semiconductor device having an asymmetric channel region between the source region and the drain region. In one embodiment, the device comprises a mesa structure on a silicon substrate with the source region being in the substrate and the mesa structure extending from the source region and substrate. The asymmetric channel region can include silicon abutting the source region and a heterostructure material such as Si1-xGex extending to and abutting the drain region. The mole fraction of Ge can increase towards the drain region either uniformly or in steps. In one embodiment, the doping profile of the channel region is non-uniform with higher doping near the source region and lower doping near the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.