Magnetoresistive memory (MRAM)

US6744662B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Freitag · Munich, DE
• Dietmar Gogl · South Burlington, US
• Heinz Hoenigschmid · Starnberg, DE
• Stefan Lammers · Hersbruck, DE

Key dates

• Filing date: May 12, 2003
• Grant date: Jun 1, 2004
• Expiry date: May 12, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/16
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

The form of leads of a cell array of a multiplicity of magnetic memory cells is optimized by deviating from a square cross section of the leads in such a way that the magnetic field component of the write currents lying in the cell array plane decreases sufficiently rapidly with increasing distance from the crossover point. The cell array is constructed from a matrix of the column leads and the row leads.