Patent · US Expired

Method and apparatus for processing wafers under pressure

US6745494B2 · kind B2 · utility

16Cited by
2References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 2002
Grant dateJun 8, 2004
Priority date
Expiry dateDec 30, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67775
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.