Method of forming copper sulfide for memory cell
US6746971B1 · kind B1 · utility
89Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2002 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Dec 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/631
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An organic memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer and passive layer. The controllably conductive media changes its impedance when an external stimuli such as an applied electric field is imposed thereon. Methods of making the organic memory devices/cells, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.