Spin dependent tunneling barriers formed with a magnetic alloy
US6747301B1 · kind B1 · utility
154Cited by
10References
37Claims
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Key dates
| Filing date | Feb 6, 2002 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Jun 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.