Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US6749488B2 · kind B2 · utility
9Cited by
27References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2002 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Oct 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.