Halo-free non-rectifying contact on chip with halo source/drain diffusion

US6750109B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James A. Culp · Downingtown, US
• Jawahar P. Nayak · Wappingers Falls, US
• Werner Rausch · Hopewell Junction, US
• Melanie J. Sherony · Fishkill, US
• Steven H. Voldman · South Burlington, US
• Noah Zamdmer · Sleepy Hollow, US

Key dates

• Filing date: Jul 1, 2002
• Grant date: Jun 15, 2004
• Expiry date: Jul 7, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/371

Abstract

A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.