Static induction transistor
US6750477B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 15, 2002 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Sep 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
In a static induction transistor, in addition to a first gate layer (4), a plurality of second gate layers (41) having a shallower depth and a narrower gap therebetween than those of the first gate layer (4) are provided in an area surrounded by the first gate layer (4), thereby an SiC static induction transistor with an excellent off characteristic is realized, while ensuring a required processing accuracy during production thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.