Magnetic memory device having soft reference layer
US6750491B2 · kind B2 · utility
109Cited by
1References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 20, 2001 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Jun 11, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.