Surface contamination analyzer for semiconductor wafers, method used therein and process for fabricating semiconductor device
US6753194B2 · kind B2 · utility
2Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2002 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | May 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24592
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.