Patent · US Expired

Method for planarizing an isolating layer

US6753236B2 · kind B2 · utility

2Cited by

8References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Klaus Feldner · Dresden, DE
Werner Graf · Chur, CH
Albrecht Kieslich · Radebeul, DE
Hermann Sachse · Dresden, DE

Key dates

Filing date	Sep 3, 2002
Grant date	Jun 22, 2004
Priority date	—
Expiry date	Sep 3, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for planarizing the surface of an isolating layer that is deposited on a semiconductor body is described. Zones where the isolating layer has a low level are covered with a block mask in order to be able to selectively etch zones of the isolating layer with a higher level.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.