Cross point memory array using multiple thin films
US6753561B1 · kind B1 · utility
260Cited by
28References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2002 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Dec 26, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Cross point memory array using multiple thin films. The invention is a cross point memory array that uses conductive array lines and multiple thin films as a memory plug. The thin films of the memory plug include a memory element and a non-ohmic device. The memory element switches between resistive states upon application of voltage pulses and the non-ohmic device imparts a relatively high resistance to the memory plug upon application of low magnitude voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.