Diode with weak anode
US6753580B1 · kind B1 · utility
4Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2000 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | May 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
A diode is formed having a weak injection shallow, low P concentration anode in an N type wafer or die. The resulting diode has a soft reverse recovery characteristic with low recovery voltage and is particularly useful either as a power factor correction diode or as an antiparallel connected diode in a motor control circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.