MIM capacitor with metal nitride electrode materials and method of formation
US6753618B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2002 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Mar 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior to the dielectric formation, the first layer may be optionally subjected to a nitridization or oxidation process. A dielectric layer of, for example, aluminum oxide (Al2O3) formed by atomic layer deposition (ALD) is fabricated over the first layer and after the optional nitridization or oxidation process. An upper electrode of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) is formed over the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.